52g

TheSAE81C52isaCMOS-silicongate,staticrandomaccessmemory(RAM),

tiplexedaddressanddatabusinterfaces

directlyto8-bitmicroprocessors/microcontrollerswithoutanytimingorlevelproblems,

iliesSAB8086,SAB8051.

AllinputsandoutputsarefullycompatiblewithNMOScircuits,

retentionisensureduptoV

DD

≥81C52hasthreedifferentinputsfortwo

chipselectmodeswhichallowtoinhibiteithertheaddress/datalines(AD0…AD7)and

thecontrollines(WR,

RD,ALE,CS2,CS3),oronlythecontrollinesRD,WR.

Thepowerconsumptionismax.5.5µWinstandbymodeandmax.16.5mWin

dbymode,thepowerconsumptionwillnotincreaseifthecontrolinputs

areonundefinedpotential.

TypeOrderingCodePackage

SAE81C52PQ67100-H9017P-DIP-16-1

SAE81C52GQ67100-H9015P-DSO-20-1(SMD)

256x8-BitStaticCMOSRAM

NMOS-Compatible

PreliminaryDataCMOSIC

SAE81C52

P-DIP-16-1

P-DSO-20-1

PFeatures

q256x8-bitorganization

qStandbymode

qCompatiblewiththeNMOSandCMOSversions

ofthemicroprocessor/microcontrollerfamilies

SAB8086,SAB8051

qVerylowpowerdissipation

qDataretentionuptoV

DD

≥1V

qThreedifferentchipselectinputsfortwochip

selectmodes

qNoincreasingpowerconsumptioninstandbymode

ifthecontrolinputsareonundefinedpotential

qTemperaturerange–40to110°C

SemiconductorGroup109.94

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SAE81C52

SemiconductorGroup2

PinConfigurations

(topview)

SAE81C52PSAE81C52G

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SAE81C52

SemiconductorGroup3

PinDefinitionsandFunctions

SAE81C52GSAE81C52PSymbolFunction

.

1,2,4,5,6

7,12,14

1…6

10,11

AD0…7Address/datalines

1512CS1Chipselect1(standby)

activelow;

inhibitsalllinesincludingcontrollines

1613ALEAddresslatchenable

17

19

14

15

WR

RD

Writeenable

Readenable

2016V

DD

Powersupply

97V

SS

GND(0V)

10

11

8

9

CS2

CS3

Chipselect2;

inhibitscontrolinputs

RD,WR

CounterparttoCS2

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SAE81C52

SemiconductorGroup4

BlockDiagram

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SAE81C52

SemiconductorGroup5

LogicSymbol

TruthTable

*:Level=V

SS

…V

DD

X:Level=loworhigh

CS1CS2CS3ALERDWRAD0…AD7Function

L

H

H

H

H

H

*

X

H

H

L

X

*

X

L

L

X

H

*

H

L

L

L

L

*

H

L

H

X

X

*

H

H

L

X

X

Floating(tristate)

Addressestomemory

Datafrommemory

Datatomemory

Floating(tristate)

Floating(tristate)

Standby

Storeaddresses

Read

Write

None

None

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SAE81C52

SemiconductorGroup6

AbsoluteMaximumRatings

T

A

=–40to110°C

ParameterSymbolLimitValuesUnit

SupplyvoltagereferredtoGND(V

SS

)

Allinputandoutputvoltages

V

DD

V

IM

0to6

V

SS

–0.3

V

DD

+0.3

V

V

V

Totalpowerdissipation

Powerdissipationforeachoutput

P

tot

P

Q

250

50

mW

mW

Junctiontemperature

Storagetemperature

T

j

T

stg

125

–55to125

°C

°C

Thermalresistance

system-airP-DIP-16-1

P-DSO-20-1

R

thSA

R

thSA

70

95

K/W

K/W

OperatingRange

SupplyvoltageV

DD

4.5to5.5V

AmbienttemperatureT

A

–40to110°C

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SAE81C52

SemiconductorGroup7

DCCharacteristics

T

A

=–40to110°C;V

DD

=4.25Vto5.5V;V

SS

=0V

ParameterSymbolLimitValuesUnitTestCondition

.

Standbysupplycurrent

Supplycurrent

I

DD

I

DD

1

3

µA

mA

V

DD

=5.5V;

T

A

=25°C;V

CS1

=0V

∆t

cyc

=1µs;V

DD

=5.5V;

C

L

=100pF

Standbyvoltagefor

dataretention

V

DD

1.0V

L-inputcurrent

(foreachinput)

Outputleakagecurrent

I

IL

I

QLK

1

1

µA

µA

V

I

=0toV

DD

V

Q

=0toV

DD

tristate

L-inputvoltage

H-inputvoltage

V

IL

V

IH

V

SS

2.2

0.8

V

DD

V

V

L-outputvoltage

H-outputvoltage

V

QL

V

QH

2.6

0.4V

V

I

QL

=1mA

I

QL

=1mA

L-inputvoltageCS1

H-inputvoltageCS1

V

IL

V

IH

V

SS

V

DD

–1

1

V

DD

V

V

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SAE81C52

SemiconductorGroup8

ACCharacteristics

T

A

=–40to110°C;V

DD

=4.5to5.5V;V

SS

=0V

ParameterSymbolLimitValuesUnit

.

ALEpulsewidth

ALElowbefore

RDlow

RDhighbeforeALEhigh

ALElowbefore

WRlow

WRhighbeforeALEhigh

t

LHLL

t

LLRL

t

RHLH

t

LLWL

t

WHLH

100

50

18

50

18

ns

ns

ns

ns

ns

AddresssetupbeforeALE

AddressholdafterALE

WRorRDpulsewidth

t

AVLL

t

LLAX

t

WLWH

18

30

250

ns

ns

ns

Datasetupbefore

WR

Dataholdafter

WR

Dataholdafter

RD

t

QVWH

t

WHQX

t

RHDX

50

18

90

ns

ns

ns

Chipselect(2,3)before

RD,WR

Chipselect(2,3)after

RD,WR

Chipselect1beforeALE

Chipselect1after

RD,WR

t

CS

t

SC

t

CSLH

t

CSWH

50

18

20

50

ns

ns

ns

ns

Outputdelaytimet

RLDV

200ns

InputcapacitancetoV

SS

(foreachinput)C

I

10pF

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SAE81C52

SemiconductorGroup9

TimingDiagram

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SAE81C52

SemiconductorGroup10

ApplicationCircuit

SAE81C52withtheµCSAB8051

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